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| (R) STPS20170CT HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF(AV) VRRM Tj VF (max) 2 x 10 A 170 V 175C 0.75 V A2 K FEATURES AND BENEFITS HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT AVALANCHE CAPABILITY SPECIFIED A2 A1 K TO-220AB STPS20150CT DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS forward current Average forward current = 0.5 Tc = 155C Per diode Per device IFSM PARM Tstg Tj dV/dt Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature* Critical rate of rise of reverse voltage tp = 10 ms sinusoidal tp = 1s Tj = 25C Value 170 30 10 20 180 6700 - 65 to + 175 175 10000 A W C C V/s Unit V A A * Thermal runaway condition for a diode on its own heatsink Ptot/Tj < 1/(Rth(j-a)) March 2004 - Ed: 1 1/5 STPS20170CT THERMAL RESISTANCES Symbol Rth(j-c) Rth(c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 5 ms, < 2% ** tp = 380 s, < 2% Parameter Junction to case Per diode Total Coupling Value 2.2 1.3 0.3 Unit C/W Min. Typ. Max. 15 15 0.90 Unit A mA V VR = VRRM IF = 10 A IF = 10 A IF = 20 A IF = 20 A 0.79 0.69 0.75 0.99 0.86 To evaluate the conduction losses use the following equation: P = 0.64 x IF(AV) + 0.011 IF2(RMS) 2/5 STPS20170CT Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(AV)(W) 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 Fig. 2: Average forward current versus ambient temperature ( = 0.5, per diode). IF(AV)(A) 12 = 0.05 = 0.1 = 0.2 = 0.5 11 10 9 Rth(j-a)=Rth(j-c) =1 8 7 6 5 4 Rth(j-a)=15C/W T 3 2 T IF(AV)(A) =tp/T 10 tp 11 12 1 0 0 =tp/T 25 tp Tamb(C) 50 75 100 125 150 175 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). IM(A) 150 Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.9 125 0.8 0.7 TC=50C 100 0.6 0.5 75 TC=75C 0.4 0.3 50 IM TC=125C t T 0.2 Single pulse 25 =0.5 t(s) 1.E-02 1.E-01 1.E+00 0.1 0.0 1.E-03 1.E-02 tp(s) 1.E-01 =tp/T tp 1.E+00 0 1.E-03 3/5 STPS20170CT Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(A) 1.E+05 Tj=175C Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 1000 F=1MHz VOSC=30mVRMS Tj=25C 1.E+04 Tj=150C 1.E+03 Tj=125C 1.E+02 Tj=100C 100 1.E+01 1.E+00 Tj=25C VR(V) 1.E-01 0 25 50 75 100 125 150 175 VR(V) 10 1 10 100 1000 Fig. 9: Forward voltage drop versus forward current (per diode). IFM(A) 100.0 Tj=125C (maximum values) 10.0 Tj=125C (typical values) Tj=25C (maximum values) 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 4/5 STPS20170CT PACKAGE MECHANICAL DATA TO-220AB REF. H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 4.95 5.15 0.194 0.202 2.40 2.70 0.094 0.106 10 10.40 0.393 0.409 16.4 typ. 0.645 typ. 13 14 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.20 6.60 0.244 0.259 3.50 3.93 0.137 0.154 2.6 typ. 0.102 typ. 3.75 3.85 0.147 0.151 OTHER INFORMATION Ordering type STPS20170CT Marking STPS20170CT Package TO-220AB Weight 2.20 g Base qty 50 Delivery mode Tube EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2004 STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain Sweden - Switzerland - United Kingdom - United States www.st.com 5/5 |
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